Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
542559 | Microelectronics Journal | 2008 | 4 Pages |
Abstract
Switching times of power MOSFET devices are investigated as function of temperature and high-field stress. Measurements show that important variations are obtained on the devices turn-on time. The threshold voltage is decreasing with temperature and varies with stress, especially at low temperatures. The oxide leakage current is found to be having safe values even at high temperatures, stressing the devices does not increase the leakage current to unsafe values except for very high temperatures.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
R. Habchi, C. Salame, R. El Bitar, P. Mialhe,