Article ID Journal Published Year Pages File Type
542559 Microelectronics Journal 2008 4 Pages PDF
Abstract

Switching times of power MOSFET devices are investigated as function of temperature and high-field stress. Measurements show that important variations are obtained on the devices turn-on time. The threshold voltage is decreasing with temperature and varies with stress, especially at low temperatures. The oxide leakage current is found to be having safe values even at high temperatures, stressing the devices does not increase the leakage current to unsafe values except for very high temperatures.

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Physical Sciences and Engineering Computer Science Hardware and Architecture
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