Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
542647 | Microelectronics Journal | 2007 | 5 Pages |
Abstract
The electron spin relaxation rates Î under different conditions in InAs quantum dots (QDs) with local elastic twists have been calculated by using the perturbation method. It is shown from the calculational results that the rate Î is dominated by the magnitude of the absolute value of anisotropic electron g factor, |gα|(α=x,y,z) and markedly influenced by the difference between the values of gα, which indicates there is a proper size for InAs QDs to minimize the rate. The relaxation rate is noticeably affected by the orientations of the magnetic field n(θ,Ï), and the ratio of the rates can be obtained by changing orientations of the field in QDs, where the maximum in our calculation is Îmax/Îminâ6.4.
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Authors
Hongliang Jiang, Duanzheng Yao, Shaohua Gong, Xiaobo Feng,