I–V characteristics of Schottky contacts based on quantum wires

In this paper we derive the I–V characteristics of Schottky contacts based on bulk metal to semiconductor quantum wires interfaces. The obtained results show that quantum confinement is a strong reduction of the reverse saturation current when compared to conventional Schottky contacts. Numerical simulations are carried out to highlight the advantages of using these proposed heterodimensional interfaces in applications involving low-noise photodetectors and low-leakage gate electrodes.