| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542715 | Microelectronics Journal | 2006 | 4 Pages |
Abstract
The effect of thick film Ni(1−x)CoxMn2O4 in-touch overlay on the X band resonance characteristics of thick film microstrip ring resonator is studied. The thick film overlay decreases the resonance frequency and increases the peak output. From the frequency shift the dielectric constant of the thick film Ni(1−x)CoxMn2O4 has been calculated. For the first time Ag thick film microstrip ring resonator has been used to study thick film Ni(1−x)CoxMn2O4 in the X band.
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Physical Sciences and Engineering
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Hardware and Architecture
Authors
S.A. Kanade, Vijaya Puri,