Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
542717 | Microelectronics Journal | 2006 | 8 Pages |
Abstract
The impact of the light illumination on the drain current of polycrystalline silicon thin-film transistors (TFT) is studied in this work. The increase of the output current as a result of raised light intensity is modeled, based on measured experimental data for different Vds and Vgs values and transistor sizes W/L. The proposed model has been verified against the measurements and the simulated output characteristics give a good approximation in the sub-threshold region.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
N.P. Papadopoulos, A.A. Hatzopoulos, D.K. Papakostas, C.A. Dimitriadis, S. Siskos,