Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications

In this paper, we present the extraction of oxide traps properties of n-metal-oxide-semiconductor (N-MOS) field effect transistors with W×L=0.5×0.1 μm2 using low-frequency (LF and random telegraph signal) noise and static I(V) characterizations. The impact of oxide thickness, on static and noise parameters is analyzed. Static measurements on N-MOS devices with different tunnel oxide thickness show anomalies (a significant increase in Vt values for low temperature and kink effect) attributed to traps located in the oxide. From LF noise analysis we find that 1/f noise stems from carrier number fluctuations. The slow oxide trap concentration deduced from the noise data is about 1015 eV/cm3 in agreement with the state-of-the-art gate oxides. Finally, drain current RTS amplitude as large as 10% have been observed.