| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 542763 | Microelectronics Journal | 2006 | 5 Pages |
Abstract
Based on the mean field approximation, we investigated analytically the spin-transport of holes through heterostructure formed by magnetic layers Ga(1âx)MnxAs separated by a non-magnetic spacer GaAs. Injected holes of up (down) spin have different transmission coefficient which oscillates for spin-down and increases fast for spin-up. The significant quantum size and (RKKY) interaction are considered simultaneously. The results indicate also that as the strength of the magnetic and non-magnetic layers increases, the spin-transmission changes. The results can be used to create efficient spin-filters.
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Authors
H. Dakhlaoui, S. Jaziri,