Article ID Journal Published Year Pages File Type
542769 Microelectronics Journal 2006 6 Pages PDF
Abstract

The coalescent properties of ZnO clusters were studied through experiment and molecular dynamics simulation in combination with the tight-binding potential and ZnO potential. The results from the simulation show that the linearly relationship between the melting temperature and the function of atom numbers of N−1/3 was obtainable. Extrapolating the result yield at a melting point of 2130 K for N→∞ (i.e. N−1/3→0) was slightly lower than the bulk value of 2248 K. In addition, the neck diameter of two ZnO clusters was a function of temperature during coalescence. The contact length was influenced by the coalescence temperature and time, when a cluster was simulated being deposited onto a substrate. The experimental results showed that the grain size increased when the coalescence temperature and sintering time were increased.

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Physical Sciences and Engineering Computer Science Hardware and Architecture
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