Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543174 | Microelectronics Journal | 2015 | 5 Pages |
Abstract
Pinched hysteresis is considered to be a signature of the existence of memristance. However, here we report on a model that exhibits pinched hysteresis yet it may represent a nonlinear inductor or a nonlinear capacitor (both with quadratic nonlinearity) or a derivative-controlled nonlinear resistor/transconductor. Further, the lobe area of the pinched hysteresis loop in these devices has inverse-memristor characteristics; i.e. it is observed to widen rather than decline with increased operating frequency. Experimental results are provided to validate the model.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M.E. Fouda, A.S. Elwakil, A.G. Radwan,