| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543363 | Microelectronics Journal | 2012 | 6 Pages |
In this paper, we have introduced an analytical subthreshold and strong inversion 3D potential model for rectangular gate (RecG) gate-all-around (GAA) MOSFET. The subthreshold and strong inversion potential distribution in channel region of a RecG MOSFET is obtained respectively by solving 3D Laplace and 3D Poisson equations. The assumed parabolic potential distribution along the z-axis in channel direction is appropriately matched with 3D device simulator after consideration of z-depended characteristic length in subthreshold region. For accurate estimation of short channel effects (SCE), the electrostatics near source and drain is corrected. The precise gate-to-gate potential distribution is obtained after consideration of higher order term in assumed parabolic potential profile. The model compares well with numerical data obtained from the 3D ATLAS as a device simulator and deckbuild as an interactive runtime of Silvaco Inc.
