Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543477 | Microelectronics Journal | 2012 | 5 Pages |
Abstract
Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Yi-Bo Liao, Meng-Hsueh Chiang, Keunwoo Kim, Wei-Chou Hsu,