Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543479 | Microelectronics Journal | 2012 | 9 Pages |
Abstract
The paper presents a SiC merged PiN Schottky diode model dedicated to the dynamic as-well-as very accurate static simulation. The model takes into account the temperature dependence of device characteristics and combines in a single model the behaviour typical for bipolar and unipolar devices. The presented electro-thermal simulations of the diode produce accurate results, consistent with the measurements. The dynamic model verification has been also presented on the example of a boost power converter.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Zubert, L. Starzak, G. Jablonski, M. Napieralska, M. Janicki, T. Pozniak, A. Napieralski,