| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 543777 | Microelectronics Journal | 2009 | 4 Pages |
Abstract
Nitrogen-doped ZnO films with preferential (0 0 0 1) orientation were synthesized on c-Al2O3 and Si substrates by metal organic vapor phase epitaxy (MOVPE) using tertiary butanol (t-BuOH) and/or N2O as oxidizers for diethylzinc (DEZ). A striking correlation between nitrogen and carbon incorporation into ZnO was revealed by concentration versus depth profiling employing secondary ion mass spectrometry (SIMS), consistently with recently reported simulations of nitrogen–carbon complexing.
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Authors
J.J. Zhu, L. Vines, T. Aaltonen, A. Yu. Kuznetsov,