Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
543830 | Microelectronics Journal | 2008 | 9 Pages |
Abstract
One of the main strength points of the new power actuator emitter-switched bipolar transistor (ESBT®) is its excellent safe operating area: as a matter of fact the emitter-switching concept enables the driving of the bipolar transistor in a much safer way compared to the traditional base-switching one. Nevertheless, at very high current density, well above the working ones, its ruggedness decreases a little when the saturation level, just before the turn-off, is extremely low or extremely high. This paper explains that in these conditions the device switches off not exactly in emitter-switching conditions or it is not properly sized.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
V. Enea, D. Kroell, M. Messina, C. Ronsisvalle,