Switching performance of 65 V vertical N-channel FLYMOSFETs

In this paper, the switching performance of 65 V vertical N-channel FLYMOSFETs is investigated for the first time and compared with a conventional vertical DMOSFET (VDMOSFET). It is shown that measurements of the different capacitances and the gate charge of the two devices are comparable. A 2D simulation study of two equivalent structures (i.e. FLYMOSFET and VDMOSFET exhibiting the same breakdown voltage) confirms that floating islands did not cause parasitic or new phenomenon, in the case of weakly doped islands.