| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544010 | Microelectronics Journal | 2007 | 6 Pages |
Abstract
We present in this work a study of the linear kink effect (LKE) occurrence in partially depleted (PD) SOI nMOSFETs with thin gate oxide. The experimental LKE dependence on the channel length, channel width and drain voltage are reported as well as the impact of various parameters on the second peak has been studied by two-dimensional numerical simulations, namely, the gate current level, the carrier lifetime, the increase of the body potential, the threshold voltage variation and AC analysis. Three-dimensional simulations were also performed in order to evaluate the LKE dependence on the channel width.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys,