| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544055 | Microelectronics Journal | 2006 | 5 Pages |
Abstract
The paper reports on a deep level transient spectroscopy analysis of Te-related DX centers in AlxGa1−xAs with aluminum composition x=0.40. As was shown from experimental results, the state energy of this trap shows a microscopic structure due to an alloy effect. A theoretical analysis based on a multi-step scheme has been made to explain the electron emission from a multiconfigurate center. Using this model, we derived the binding energies of the splitted Te-DX states in the alloy material studied.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
L. Bouzrara, R. Ajjel, H. Mejri, M.A. Zaidi, H. Maaref,