| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544061 | Microelectronics Journal | 2006 | 7 Pages |
Abstract
A semi empirical model has been proposed for sub-micron GaN MESFET's to calculate the I–V characteristics using an accurate velocity-field relationship obtained by fitting it with the Monte Carlo (MC) simulation. The results so obtained are compared with the experimental results to validate our model and are also compared with the results obtained from the simple saturation model to present the influence of electron drift velocity modeling on the device parameters. The model has been extended to predict the microwave parameters such as transconductance and output conductance of the device.
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R.S. Gupta,