Resonant excitation of microwave acoustic modes in n-GaAs film

Resonant excitation of coupled space charge-acoustic waves in thin n-GaAs film is theoretically investigated. Possible mechanisms of electroacoustic coupling are piezoeffect and deformation potential. The film is placed onto a substrate i-GaAs without an acoustic contact. The film includes two-dimensional electron gas with a high negative differential conductivity. A possibility of resonant excitation of acoustic modes of the film at the first and the second harmonic of input microwave signal has been demonstrated.