| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544130 | Microelectronics Journal | 2006 | 5 Pages |
Abstract
A successful development of a very high performance and reliable power PHEMT MMIC technology is reported. In this paper, a Ku-Band 1 W AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU application is demonstrated. This four-stage amplifier is designed to fully match for a 50 Ω input and output impedance. With 7 V and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.
Keywords
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
C.W. Huang, S.J. Chang, W. Wu, C.L. Wu, C.S. Chang,