Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study

Czochralski-grown nitrogen-doped (NCZ) silicon was studied using different methods. Measurements of interface traps density, effective generation lifetime and effective surface generation velocity were performed on selected Metal-Oxide-Semiconductor (MOS) structures. Application of the positron annihilation technique (PAS)—pulsed low energy positron system (PLEPS)—was focused on the detection of nitrogen-related defects in NCZ silicon in the near surface region. PAS—PLEPS technique gave relevant results on p-type NCZ silicon. Low sensitivity in the application to n-type NCZ silicon discriminates the PAS—PLEPS technique and should be alternated by other experimental technique. On the other hand, more pertinent measurement of generation lifetime was performed on MOS structures with n-type Si. Although the generation lifetime decreases in NCZ silicon, considerable lateral homogenization of the relaxation time was observed on the wafer.