Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique

The spacer technique is proposed for the fabrication of the Asymmetric Schottky Barrier MOSFETs (ASB-MOSFET). The characteristics of the 45 nm and the 20 nm n-channel ASB-MOSFETs, which adopt a Schottky barrier height of 0.9 eV at source and that of 0.2 eV at drain, have been simulated and discussed by the comparisons with the conventional Schottky Barrier MOSFETs (SB-MOSFET). With a higher Ion/Ioff ratio, the ASB-MOSFET structure has shown a better performance than the conventional SB-MOSFETs.