| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544715 | Microelectronics Reliability | 2015 | 8 Pages |
•Propose six properties for missing LDD in the device measured data.•Output characteristic reveal no saturation for the biasing at defect side.•Theoretic model of missing LDD is provided.•Simulation results meet the above proposals.•Mature wet stain recipe performs effective PFA for missing NLDD.
In the recent years, localization of subtle defects has required device electrical data. Nanoprobing systems based on scanning electron microscopy (SEM) or atomic force microscopy (AFM) have become a significant tool for device measurement in failure analysis (FA) Labs. Failure Analysts can use electrical characteristics to isolate failure location in the metal–oxide–semiconductor field-effect-transistor (MOSFET). The missing lightly doped drain (LDD) implant is an example of a critical failure mechanism for the MOSFET and cell in the SRAM which is localized using nanoprobing. In this article, device data analysis and theoretical deductions are discussed related to missing LDD doping. Device data is used to propose a full set of characteristic for missing LDD. The simulation from a mature tool is able to support the electrical characteristics. The capability and challenge of the following physical FA to reveal the defect are also discussed.
