Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544957 | Microelectronics Reliability | 2014 | 8 Pages |
•Transient detection circuit realized with SCR to detect transient disturbance.•Electrostatic discharge (ESD) generates transient disturbance to the system.•Electrical fast transient (EFT) generates transient disturbance to the system.•The electrical transients during system-level ESD or EFT tests can be detected.•Cooperated with firmware to execute recovery procedure of microelectronic system.
A new silicon controlled rectifier (SCR)-based transient detection circuit for on-chip protection design against system-level electrical transient disturbance is proposed. The circuit function to detect positive or negative electrical transients during system-level electrostatic discharge (ESD) and electrical fast transient (EFT) tests has been verified in silicon chip. The experimental results in a 0.18-μm CMOS process have confirmed that the new proposed detection circuit can successfully memorize the occurrence of system-level electrical transient disturbance events. The detection results can be cooperated with firmware design to execute system recovery procedures, therefore the immunity of microelectronic systems against system-level ESD or EFT tests can be effectively improved.