| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545028 | Microelectronics Reliability | 2013 | 4 Pages |
Abstract
In this paper we have investigated the long-term reliability of TiN/HfSixOy/TiN Metal–Insulator–Metal (MIM) capacitors by using constant voltage stress (CVS) and constant current stress (CCS). No significant increase in leakage current was observed as a function of stress time. On the other hand, stress induced capacitance changes were observed due to change in quadratic and liner coefficients of permittivity nonlinearities. Stress-induced oxygen vacancy related defect formation believed to be the cause of this shift in permittivity.
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Hardware and Architecture
Authors
D. Misra, Jyothi Kasinath, Arun N. Chandorkar,