| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545173 | Microelectronics Reliability | 2010 | 4 Pages |
Abstract
Several simplifications on MOSFET compact model for oxide breakdown degradation are presented. The current partitioning coefficient is systematically investigated, including influence of drain voltage and increasing breakdown strength. It reveals that several conduction paths are formed during breakdown and that the reduction of channel conductance is the dominant phenomenon at operating voltages. Based on these observations, a new physically based compact model including soft breakdown (SBD) is proposed. KW: soft breakdown, characterization, modeling, reliability.
Related Topics
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Authors
L. Gerrer, M. Rafik, G. Ribes, G. Ghibaudo, E. Vincent,