| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545184 | Microelectronics Reliability | 2010 | 4 Pages |
Abstract
In this work, a Conductive Atomic Force Microscopy (CAFM) working in contact mode has been used to compare the measured electrical properties and breakdown (BD) on ultra thin high-k dielectrics, when different environmental conditions are used. In particular, the effect of the environment on the conductivity measurements, the lateral resolution in current images and the lateral propagation of the BD event will be analyzed in air, dry nitrogen (N2) and Ultra High Vacuum (UHV).
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Authors
M. Lanza, M. Porti, M. Nafría, X. Aymerich, E. Whittaker, B. Hamilton,