| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545206 | Microelectronics Reliability | 2010 | 4 Pages |
Abstract
Temperature distribution in diced and packaged DMOS devices subjected to repetitive stress is analyzed using transient interferometric mapping (TIM) technique combined with measurements on diode built-in temperature sensors. The effect of DMOS device position on dice, duty cycle and chip ambient temperature on thermal distribution is studied. The TIM experiments and transient temperature measurements are in good agreement with numerical 3D thermal simulations. Failure analysis data after long term pulse stress testing indicate electromigration degradation of the top metal.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
S. Bychikhin, G. Haberfehlner, J. Rhayem, D. Vanderstraeten, R. Gillon, D. Pogany,