Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545212 | Microelectronics Reliability | 2010 | 5 Pages |
Abstract
Microscopic Lock-In Thermography (LIT) has proven unsurpassed capability for non-destructive localization of thermally active defects like shorts or resistive opens, even through the full package. This paper briefly reviews the real-time pixel-wise lock-in methodology, as the key to the extreme temperature sensitivity. A typical LIT work-flow is demonstrated whereby the main focus of the paper is to discuss and demonstrate different ways how to activate the thermally active defects with more complex DUTs/defect signatures, requiring ATE docking.
Related Topics
Physical Sciences and Engineering
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Hardware and Architecture
Authors
R. Schlangen, H. Deslandes, T. Lundquist, C. Schmidt, F. Altmann, K. Yu, A. Andreasyan, S. Li,