Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

By means of step stressing tests on AlGaN/GaN HEMTs the robustness properties of devices fabricated on wafers with different buffer designs have been compared to each other (standard UID GaN buffer and UID Al0.05Ga0.95N back-barrier in combination with GaN channel layer). The devices with GaN buffer showed an abrupt increase of gate leakage current after reaching drain bias values in the range of 30 V while devices with Al0.05Ga0.95N back-barrier did not show any degradation up to 120 V drain bias. All DC-Step-Stress tests have been accompanied by Electroluminescence (EL) analysis and electrical characterization techniques before, during and after stress. It has been shown that EL at forward and reverse bias conditions can be used as an indicator of potential device degradation. Devices comprising an AlGaN back-barrier design demonstrated superior robustness.