| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545297 | Microelectronics Reliability | 2011 | 5 Pages |
Abstract
The influence of the electric field on the reliability of AlGaN/GaN HEMTs is investigated in this work. We first demonstrate that at a certain electric field strength at the gate edge the gate characteristics of the device changes. This degradation is irreversible and is strongly influenced by growth parameter. A drain-voltage step-stress method is applied to the devices for investigating different layouts, and a consequent application enabled us to assign parameters mitigating the peak field strength and improve reliability.
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Authors
M. Cäsar, M. Dammann, V. Polyakov, P. Waltereit, R. Quay, M. Mikulla, O. Ambacher,