Article ID Journal Published Year Pages File Type
545299 Microelectronics Reliability 2011 5 Pages PDF
Abstract

Electron device degradation, although not directly accounted for, represents a key issue in microwave circuit design. This is especially true when the particular applications involved (e.g., satellite, military, consumer) do not allow or strongly discourage any kind of maintenance. As a matter of fact, in order to account for device degradation in circuit design, a suitable electron device model is needed which is able to predict the performance degradation as a function of the actual electrical regime involved in the device operation. Such a kind of model is not available in literature. In this paper, quantitative results are provided for device degradation indicators which correlate DC and RF stress experiments. These results can be considered an important step toward the definition of a nonlinear model accounting for device degradation.

Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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