| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545311 | Microelectronics Reliability | 2011 | 5 Pages |
Abstract
We derive a general purpose ageing model for the device parameter drift class that may be related to the activation of a large number of statistically independent microscopic defects, with distributed activation energy and first-order reaction kinetics. We present, as a practical application, a model for predicting the ON state resistance drift of a high-voltage n-channel MOSFET under hot-carrier stress.
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Authors
F. Alagi,