Improved performance of trench power MOSFET with SiGeC-based channel

A structure of power trench MOSFET with SiGeC-channel is presented in this paper. The models applicable for the SiGeC-channel trench MOSFET (SGCT) are presented and the improved device characteristics by incorporation smaller-sized carbon atoms substitution into the SiGe system are simulated and analyzed. Simulation results show that SiGeC alloy is a promising channel material for power trench MOSFET application. SGCT owns better IDS–VDS characteristic, higher saturated current, lower On-state resistance and bigger breakdown voltage compared to the trench MOSFET devices with SiGe-channel. The stability structure works well and the performance of SGCT is improved by C incorporation though the investigated simulations of On-state resistance and breakdown voltage in different temperatures.