| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545352 | Microelectronics Reliability | 2010 | 4 Pages |
Abstract
The tungsten nanocrystals (W-NCs) memories fabricated by W/Si dual-sputtering and O2 and N2O annealing process were investigated. Significant W-NCs dots were formed by N2O annealing and proved by the energy dispersive X-ray spectrometer (EDX) analysis. Superior electrical properties of W-NCs memories were optimized for 20/30 W/Si dual-sputtered ratio, 10–15 nm blocking oxide thickness and N2O annealing at 950 °C. A pronounced capacitance–voltage hysteresis was observed with a memory window of 6.5 V under +9/−9 V sweeping.
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Authors
Jer-Chyi Wang, Pai-Chi Chou, Chao-Sung Lai, Wen-Hui Lee, Chi-Fong Ai,