| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545360 | Microelectronics Reliability | 2010 | 5 Pages |
Self-assembled GexSi1−x islands were grown on Si(0 0 1) substrates by solid source molecular beam epitaxy. Two different morphological shapes with different sizes were evolved by tuning the growth time at a constant deposition temperature. Micro-Raman analysis was carried out to investigate the composition, intermixing and strain of resultant islands. The observed broad infra-red photoluminescence signal from grown samples was associated with radiative recombination of holes confined in the Ge islands and electrons localized in the Si buffer layer. The PL peak position and intensity were found to be influenced by the islands size and intermixing of Si and Ge. The electrical properties of the islands were studied through photoexcited I–V characteristics and current imaging using conducting mode atomic force microscopy.
