| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545363 | Microelectronics Reliability | 2010 | 4 Pages |
Abstract
An InGaAs submonolayer (SML) quantum-dot photonic-crystal light-emitting diode (QD PhC-LED) with for fiber-optic applications is reported. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A maximum CW output power of 0.34 mW at 20 mA has been obtained in the 980 nm range.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Hung-Pin D. Yang, Zao-En Yeh, Gray Lin, Hao-Chung Kuo, Jim Y. Chi,