Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545391 | Microelectronics Reliability | 2010 | 4 Pages |
Abstract
The optical characterization of excitons coupled with surface plasmon resonance (SPR) for InGaN/GaN heterostructures with perforated cylindrical micropillar arrays is investigated. We analyze the optical characteristics of excitons coupled with SPR for InGaN/GaN heterostructures with perforated cylindrical micropillars, as shown in measurements of the photoluminescence (PL) spectra over a broad range of temperatures between 20 and 300Â K. From the temperature-dependent PL spectra, we observe the better SPR coupling effects, resulting in less carrier confinement in the InGaN energy band. The magnitude of the redshift of the emission peak shown by the sample with the coated aluminum (Al) pattern is larger than that shown by the sample with no metal film. This was due to the presence of more exciton coupling surface plasmons within the Al/InGaN interface. The enhancement of the PL intensity of the sample with the deposited Al pattern film can be attributed to a stronger SPR coupling interaction with the excitons. The experimental results indicate that a perforated Al cylindrical micropillar array can significantly affect carrier confinement, enhancing the quantum efficiency of Al/In-rich InGaN heterostructures due to the interaction of the SPR coupling effect between the InGaN quantum dot-like region and the Al film.
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Authors
Yeu-Jent Hu, Chia-Hui Fang, Jen-Cheng Wang, Hung-Lun Lo, Tzer-En Nee,