| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545434 | Microelectronics Reliability | 2010 | 6 Pages |
Abstract
Channel hot-electron-induced degradation on strained MOSFETs is examined experimentally. BSIM stressed model parameters are extracted from measurement and used in Cadence SpectreRF simulation to study the impact of channel hot electron stress on dual-band class-E power amplifier and integrated low-noise amplifier-mixer RF performances. Channel hot electron effect decreases power efficiency of dual-band class-E power amplifier and increases the noise figure of low-noise amplifier-mixer combined circuit.
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Authors
J.S. Yuan, J. Ma, W.K. Yeh, C.W. Hsu,