Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545453 | Microelectronics Reliability | 2009 | 5 Pages |
Abstract
For the purpose of rapidly identifying the functional weak points of SiP products and defining appropriate design rules, a new methodology is proposed to achieve fast reliability qualification. This new methodology is based on the moisture absorption behavior along the critical interface of a SiP carrier and on the most sensitive zone to delamination of the SiP carrier, determined by simulation and experimentally checked. In this paper, a new accelerated preconditioning is proposed and a new non destructive thermal method to monitor the delamination is presented. The effectiveness of this new stress test to accelerate the failure mechanism of the SiP carrier and the ability to detect delamination are evaluated by performing a DOE.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Charles Regard, Christian Gautier, Hélène Fremont, Patrick Poirier, M.A. Xiaosong, Kaspar M.B. Jansen,