Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs

SOI partially depleted body-contact MOSFETs were subjected to static and dynamic hot carrier stress. Drain current was investigated by means of Deep Level Transient Spectroscopy and switch-ON transient analysis in a wide temperature range. Under static degradation regime, drain current behaviour was determined by the creation of two discrete traps most likely located in the drain vicinity; a hole trap cited in the literature and a defect of metastable nature. Under dynamic degradation regime, drain current behaviour was determined by body–Si/SiO2 interface-state generation. Experimental data and fitting results based on stretched exponential law are in accordance.