| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545472 | Microelectronics Reliability | 2009 | 4 Pages |
The degradation dynamics and post-breakdown current–voltage (I–V) characteristics of magnesium oxide (MgO) layers grown on n and p-type indium phosphide (InP) substrates subjected to electrical stress were investigated. We show that the current–time (I–t) characteristics during degradation can be described by a power-law model I(t) = I0t−α, where I0 and α are constants. It is reported that the leakage current associated with the soft breakdown (SBD) failure mode follows the typical voltage dependence I = aVb, where a and b are constants, for both injection polarities but in a wider voltage range compared with the SiO2/Si system. It is also shown that the hard breakdown (HBD) current is remarkably high, involving large ON–OFF fluctuations that resemble the phenomenon of resistive switching previously observed in a wide variety of metal oxides.
