Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545477 | Microelectronics Reliability | 2009 | 5 Pages |
Abstract
Time-Dependent Dielectric Breakdown (TDDB) mechanisms remain the key issue to understand in order to enhance the reliability of new capacitors technologies. In this work we tried to model capacitors failure mechanism according to percolation theory, in agreement with the statistical behavior of PZT capacitors times to breakdown (tbd). The role of microstructural defects such as interlayers and cavities in failure mechanism has been emphasized.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M.T. Chentir, J.-B. Jullien, B. Valtchanov, E. Bouyssou, L. Ventura, C. Anceau,