Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545487 | Microelectronics Reliability | 2009 | 5 Pages |
Abstract
A calibrated system for power metal reliability analysis in smart power technology chips is presented. This system is mainly designed for temperature evaluation during temperature-cycling experiments. Infrared camera measurements under single shot high energy pulses are correlated with electro-thermal finite element simulation and failure analysis. A special test structure, containing poly-silicon heaters, is used to produce thermal stress. The location of a hot spot agrees well with the position of degraded power metal.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Helmut Köck, Vladimir Košel, Christian Djelassi, Michael Glavanovics, Dionyz Pogany,