Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545493 | Microelectronics Reliability | 2009 | 4 Pages |
Abstract
Thermo-elastic properties on aluminum interconnects are characterized by Scanning Joule Expansion Microscopy and complementary finite element analyses. Temperature distributions can be obtained by the correlation of the three-dimensional thermal expansion vectors and the device structure. Vertical and lateral displacements give access to thermally induced strains, which is important for advanced failure analyses on degradation processes.
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Authors
A.-K. Tiedemann, K. Kurz, M. Fakhri, R. Heiderhoff, J.C.H. Phang, L.J. Balk,