| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545559 | Microelectronics Reliability | 2009 | 6 Pages |
Abstract
The aim of this paper is to show and discuss results of three-dimensional finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and cooling strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal modeling and management.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
F. Bertoluzza, N. Delmonte, R. Menozzi,