| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545596 | Microelectronics Reliability | 2010 | 5 Pages |
Abstract
This paper investigates the electro-thermal stress-induced performance degradation of a cascode low-noise amplifier built using advanced InGaP/GaAs heterojunction bipolar transistors. Changes in device characteristics due to the electro-thermal stress are examined experimentally. SPICE Gummel-Poon model parameters extracted from the pre- and post-stress HBT measurement data are then used in Cadence SpectreRF simulator to study the impact of the electro-thermal stress on the InGaP/GaAs LNA’s RF performance.
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Authors
Xiang Liu, Jiann-shiun Yuan, Juin J. Liou,