| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545597 | Microelectronics Reliability | 2010 | 6 Pages |
Abstract
This paper presents the extraction procedure of VBIC model parameters for an InGaAsSb DHBT, including the determination of thermal resistance. Unlike conventional GaAs-based HBTs in which thermal resistance can be measured with negligible avalanche effect, the InGaAsSb DHBT under test has both thermal and avalanche effects in the same low-biasing range. Using regular measurement techniques of thermal resistance induces a great error. We have developed a procedure to overcome the problem. The VBIC model showed excellent agreement with the experimental result.
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Authors
Yang-Hua Chang, Jian-Wen Chen,