| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 545696 | Microelectronics Journal | 2014 | 4 Pages |
Abstract
In the proposed work analytical modeling of single halo triple material surrounding gate (SH-TMSG) MOSFET is developed. The threshold voltage and subthreshold current has been derived using parabolic approximation method and the simulation results are analyzed. The threshold voltage roll off is reduced and it denotes the deterioration of short channel effects. The results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
P. Suveetha Dhanaselvam, N.B. Balamurugan,