Effect of crystallographic defects on the reverse performance of 4H–SiC JBS diodes

A quantitative analysis of the effect of crystallographic defects on the performance of 4H–SiC junction barrier Schottky (JBS) diodes was performed. It has been shown that higher leakage current in diodes is associated with a greater number of elementary screw dislocations. Further, threading dislocation pair arrays were observed in some of the fabricated devices and, for the first time, the role of such defects on JBS reverse leakage currents is investigated.